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【SI4196DYT1E3 Transistors - FETs, MOSFETs - Single VISHAY】【IH5027CPE】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI4196DYT1E3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 20V 8A 8SOIC

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

22nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

830pF @ 10V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

2W (Ta), 4.6W (Tc)

Rds On (Max) @ Id, Vgs:

27 mOhm @ 8A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Search For SI4196DYT1E3 - SI4196DYT1E3 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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Company

SI4196DY-T1-E3

SI4196DY-T1-E3 VISHAY2016+850000China
Far East Electronics Technology Limited  12

SI4196DY-T1-E3

SI4196DY-T1-E3 VISHAY12+2500China
Sino Star Electronics (HK) Co.,Limited 11

SI4196DY-T1-E3

SI4196DY-T1-E3 VISHAY2010+4238Hong Kong
Asia Components Co.,Limited 10

SI4196DY-T1-E3

SI4196DY-T1-E3 Vishay Siliconix2016+1000China
MY Group (Asia) Limited  13

SI4196DY-T1-E3

SI4196DY-T1-E3 Vishay14+5000China
Dopoint Hi-Tech Limited  13

IH5027CJE

IH5027CJE INTERSIL630Hong Kong
Ouerte Technology (HK)Limited 7

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