【SI4435DY VISHAY】【1812CC102KAT1AJ】【3505411】Electronic Components In Stock Suppliers in 2017【Price】【Datasheet PDF】USA

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Part Number:

Main Category:

Discrete Semiconductor Products

Sub Category:

Transistors - FETs, MOSFETs - Single

Brand:

Fairchild/ON Semiconductor

Description:

MOSFET P-CH 30V 8.8A 8-SOIC

Series:

PowerTrench

Packaging:

Cut Tape (CT)

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

8.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

24nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

1604pF @ 15V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta)

Rds On (Max) @ Id, Vgs:

20 mOhm @ 8.8A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO

Package / Case:

8-SOIC (0.154", 3.90mm Width)

SI4435DY Description

MOSFET P-CH 30V 8.8A 8-SOIC Series: PowerTrench? Amplifier Type: -55°C ~ 175°C (TJ) Applications: Surface Mount Capacitance: 8-SOIC (0.154, 3.90mm Width) Connector Type: 8-SOIC Function: Logic Type: Number of Channels: Proto Board Type: Resistance (Ohms): Voltage - Off State: Circuit: Direction: Inputs - Side 1/Side 2:
Hot Offer
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SI4435DY

VISHAYNA131Yat Nang Technology   11

SI4435DY, 1812CC102KAT1AJ, 3505411
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AVX16+100000Southern Electronics Tech Limited   13

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TYCO/AMP2015+34000Bonase Electronics (HK) Co., Limited    11

Related Part Number

1812CC102KAT1AJ | 3505411 | SI4435/TSM4435 | SI4435ADY/BDY1E3 | SI4435BDY | SI4435BDYT1E3 | SI4435DDY | SI4435DDY1E3 | SI4435DDYT1E3 | SI4435DDYT1GE3 | SI4435DYPBF
SI4435DY Ref.:
[hkinbatch20171020]
[HGCacheDateZOITIIZE]
[HGReferer_TRC]
[HKIN20171020GESTYLE]
[HKIN20171020PartDetails]

SI4435DY Related Keywords in 2017 USA

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