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【SI4493DYT1E3 Transistors - FETs, MOSFETs - Single VISHAY】【IHY20N135R3】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI4493DYT1E3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET P-CH 20V 10A 8SOIC

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

110nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

-

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

1.5W (Ta)

Rds On (Max) @ Id, Vgs:

7.75 mOhm @ 14A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Search For SI4493DYT1E3 - SI4493DYT1E3 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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Company

SI4493DY-T1-E3

SI4493DY-T1-E3 VISHAY2016+5404China
Ande Electronics Co., Limited  12

SI4493DY-T1-E3

SI4493DY-T1-E3 VISHAY30300Hong Kong
MASSTOCK ELECTRONICS LIMITED 1
Warranty

SI4493DY-T1-E3

SI4493DY-T1-E3 VISHAY17+65000Hong Kong
C & I Semiconductors Co., Limited  8

SI4493DY-T1-E3

SI4493DY-T1-E3 VISHAY12+2500China
Sino Star Electronics (HK) Co.,Limited 12

SI4493DY-T1-E3

SI4493DY-T1-E3 VISHAY10+314China
Nantian Electronics Co., Limited  9
Warranty

IHY20N120R3

IHY20N120R3 INFINEON1151+6694China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15
STRCWarranty

IHY20N120R3

IHY20N120R3 Infineon7351China
Nosin (HK) Electronics Co.  12

IHY20N120R3

IHY20N120R3 INFINEON90909China
HK Jiaweiyi Technology Limited  12
Warranty

IHY20N120R3

IHY20N120R3 Infineon40000China
Belt (HK) Electronics Co  12

IHY20N120R3XKSA1

IHY20N120R3XKSA1 Infineon Technologies2016+8000China
MY Group (Asia) Limited  13

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