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【SI4800B VISHAY】【FF400R33KB3】【AX300750M5A】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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Shenzhen Chuangxinda Electronic-Tech Co.,Ltd, Hongkong Rixin International Trading Company ...
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SI4800B

SI4800B VISHAY09+1000China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  14

SI4800B

SI4800B VISHAY08+776Hong Kong
Hongkong Rixin International Trading Company  1

SI4800B

SI4800B VISHAY2015+776China
Bonase Electronics (HK) Co., Limited  11

SI4800B

SI4800B VISHAY08+500Hong Kong
JFJ Electronics Co.,Limited  12

SI4800B

SI4800B SI09+1884China
Gaokeda Technology (HK) Limited  9

FF400R33KB3

FF400R33KB3 EUPEC695China
BeiJing Jietuozijing Science and Technology Co., Ltd.  13

FF400R33KF2C

FF400R33KF2C INFINEON32China
Yaspro Electronics (Shanghai) Co., Ltd 1

FF400R06KE3

FF400R06KE3 Infineon Technologies Industrial Power and Control2016+18000China
MY Group (Asia) Limited  12

FF400R06KE3

FF400R06KE3 Infinoen2015+1000China
Bonase Electronics (HK) Co., Limited  11

FF400R33KF2C

FF400R33KF2C NULL16+60000China
APEX ELECTRONICS CO., LIMITED 3

AX3007-50M5A

AX3007-50M5A AXELITE1600Taiwan
Sunrich-Tech Corporation 6

AX3007-50ESA

AX3007-50ESA AXE15+1011China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  14

AX3007BSATR

AX3007BSATR AXELITE2500Taiwan
Corich International Ltd. 13

AX3007-50ESA

AX3007-50ESA AXELITE16+4906China
SOUTH MICROELECTRONICS (HK) CO., LIMITED  1

AX3007-SA

AX3007-SA AXELIT2016+22800China
HK Best Time Electronics Co.,LIMITED1

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FF400R33KB3 | AX300750M5A | SI4741C10GMR | SI4743C10GMR | SI4749C10AM | SI4757A10 | SI4766A10GM | SI4779CYT1 | SI4800 | SI4800BDY | SI4804BDY
 [hkinbatch20170420] [HGCacheDateZOITOTZO] [HGReferer_Escrow] [HKINPDSTYLE]
SI4800B Datasheet Feb 17, 2004 SI4800 . N-channel TrenchMOS logic level FET. Rev. 02 17 February 2004. Product data. M3D315. 1. Product profile. 1.1 Description. Vishay Siliconix. Si4800BDY. Document Number: 72124. S-83039-Rev. H, 29- Dec-08 www.vishay.com. 1. N-Channel Reduced Q g. , Fast Switching MOSFET. Si4800DY. Vishay Siliconix. Document Number: 70856. S-31062 Rev. B, 26- May-03 www.vishay.com. 1. N-Channel Reducded Qg, Fast Switching MOSFET. Top MOSFET = Si4800 . 100. 120. 140. 160. 180. 200. 220. 240. 260. -60 -30. 0. 30. 60. 90 120 150. I CS. ( . A). TEMPERATURE ( C). Overcurrent Trip Point vs. Jan 15, 2001 Q1. Si4416DY or Si4800 *. 5, 6, 7, 8. 1, 2, 3. R1. L1. C13. 0.1 mF. R11. 0. D2A. CMPD2836. D2B. CMPD2836. Q3. Si4812DY or. Si4800 *. 1. 2, 3.

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