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【SI4830CDYT1GE3】【Transistors - FETs, MOSFETs - Arrays】【VISHAY】【VISHAY SILICONIX】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

SI4830CDYT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Vishay Siliconix

Description:

MOSFET 2N-CH 30V 8A 8-SOIC

Series:

LITTLE FOOT

Packaging:

Tape & Reel (TR)

FET Type:

2 N-Channel (Half Bridge)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

8A

Rds On (Max) @ Id, Vgs:

20 mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

950pF @ 15V

Power - Max:

2.9W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

8-SO

Search For SI4830CDYT1GE3 - SI4830CDYT1GE3 Product Information : 

  powered by HKIN - Datasheet (Result Page) About 2 results (0.36 seconds) Web (2)       Si4830CDY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Si4830CDY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Oct 12, 2009 1. Ordering Information: Si4830CDY - T1 - E3 (Lead (Pb)-free). Si4830CDY - T1 - GE3 (Lead (Pb)-free and Halogen-free). N-Channel MOSFET. D1. clipped from Google - 7/2017 Si4830CDY vs. Si4830ADY Specification Comparison Si4830CDY vs. Si4830ADY Specification Comparison Sep 3, 2008 Part Number Replacements: Si4830CDY - T1 - E3 replaces Si4830ADY-T1-E3. Specification comparisons are supplied as a courtesy to compare clipped from Google - 7/2017 1 powered by Custom Search     HKIPortal_resize(); HKIPortal_attachEvent(window, load, HKIPortal_resize); HKIPortal_attachEvent(window, load, HKIPortal_onLoad); reviews - - cal - Price range: Availability: .   Price: . - - = tn.height * 7 / 5 data-attr={src:tn.src}> HKinDataSheet_ZO1GOSIT
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SI4830CDY-T1-GE3

SI4830CDY-T1-GE3  VISHAY 1103+QFN 29858
In-Stock
China
Zhengxinyuan Electronics (HK) Co., Limited E-Catalog 13th Year Member

SI4830CDY-T1-GE3

SI4830CDY-T1-GE3  VISHAY 1103+QFN 35258China
Ande Electronics Co., Limited E-Catalog 12th Year Member

SI4830CDY-T1-GE3

SI4830CDY-T1-GE3  Vishay Siliconi... 15000China
MY Group (Asia) Limited E-Catalog 13th Year Member

SI4830CDY-T1-GE3

SI4830CDY-T1-GE3  VIS 17+ 22500China
North Star Technology (HK) Co.,Ltd E-Catalog 1st Year Member

SI4830CDY-T1-GE3

SI4830CDY-T1-GE3  VISHAY 1718+standard 5000China
Zonepen Electronics (HK) Limited E-Catalog 1st Year Member

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  powered by HKIN - Datasheet (Result Page) About 2 results (0.36 seconds) Web (2)       Si4830CDY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Si4830CDY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Oct 12, 2009 1. Ordering Information: Si4830CDY - T1 - E3 (Lead (Pb)-free). Si4830CDY - T1 - GE3 (Lead (Pb)-free and Halogen-free). N-Channel MOSFET. D1. clipped from Google - 7/2017 Si4830CDY vs. Si4830ADY Specification Comparison Si4830CDY vs. Si4830ADY Specification Comparison Sep 3, 2008 Part Number Replacements: Si4830CDY - T1 - E3 replaces Si4830ADY-T1-E3. Specification comparisons are supplied as a courtesy to compare clipped from Google - 7/2017 1 powered by Custom Search     HKIPortal_resize(); HKIPortal_attachEvent(window, load, HKIPortal_resize); HKIPortal_attachEvent(window, load, HKIPortal_onLoad); reviews - - cal - Price range: Availability: .   Price: . - - = tn.height * 7 / 5 data-attr={src:tn.src}> HKinDataSheet_ZO1GOSIT
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