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【SI4936BDYT1GE3 Transistors - FETs, MOSFETs - Arrays VISHAY】【ILE2021CP】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI4936BDYT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Vishay Siliconix

Description:

MOSFET 2N-CH 30V 6.9A 8-SOIC

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

6.9A

Rds On (Max) @ Id, Vgs:

35 mOhm @ 5.9A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

530pF @ 15V

Power - Max:

2.8W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package:

8-SO

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Part NumberPart Number BrandD/CQtyCountry /
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Company

SI4936BDY-T1-GE3

SI4936BDY-T1-GE3 VISHAY440Singapore
Splendent Technologies Pte Ltd  4

SI4936BDY-T1-GE3

SI4936BDY-T1-GE3 VISHAY0851+1381China
C&G Electronics (HK) Co., Ltd 1

SI4936BDY-T1-GE3

SI4936BDY-T1-GE3 VISHAY06+655China
HK TWO L ELECTRONIC LIMITED  6

SI4936BDY-T1-GE3

SI4936BDY-T1-GE3 VISHAY12+1005Hong Kong
Asia Components Co.,Limited 10

SI4936BDY-T1-GE3

SI4936BDY-T1-GE3 Vishay Siliconix2016+8000China
MY Group (Asia) Limited  13

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