【SI5517DUT1GE3 Transistors - FETs, MOSFETs - Arrays VISHAY】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI5517DUT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Vishay Siliconix

Description:

MOSFET N/P-CH 20V 6A CHIPFET

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N and P-Channel

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

6A

Rds On (Max) @ Id, Vgs:

39 mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

16nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

520pF @ 10V

Power - Max:

8.3W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

PowerPAK ChipFET,Dual

Supplier Device Package:

PowerPAK ChipFet Dual

1 - 5 of 5 Record(s)
SI5517DUT1GE3
 Part NumberBrandD/CQtyCompany

SI5517DU-T1-GE3

VISHAY16263Ande Electronics Co., Limited    12

SI5517DU-T1-GE3

Vishay Semiconductors40111HongKong Wanghua Technology Limited   4

SI5517DU-T1-GE3

Vishay Siliconix15000MY Group (Asia) Limited    13

SI5517DU-T1-GE3

VISHAY1726+8178Zonepen Electronics (HK) Limited    1

SI5517DU-T1-GE3DKR-ND

SILI20141089Ande Electronics Co., Limited    12

Related Part Number

SI5519DU-T1-GE3 | SI5902DC-T1-E3 | SI5513CDC-T1-E3 | SI5513CDC-T1-GE3 | SI5513DCT1E3 | SI5515CDC-T1-E3 | SI5515CDC-T1-GE3 | SI5515DC-T1-E3 | SI5519DU-T1-GE3 | SI5902DC-T1-E3 | SI5903DC-T1-E3
SI5517DUT1GE3 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOTIG]
[HGReferer_Escrow]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SI5517DUT1GE3 Related Keywords in 2018 USA

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