【SI7460DP-T1-E3 Transistors - FETs, MOSFETs - Single VISHAY】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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Part Number:

SI7460DP-T1-E3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 60V 11A PPAK SO-8

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

100nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

-

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

1.9W (Ta)

Rds On (Max) @ Id, Vgs:

9.6 mOhm @ 18A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK SO-8

Package / Case:

PowerPAK SO-8

1 - 5 of 5 Record(s)
SI7460DPT1E3
 Part NumberBrandD/CQtyCompany

SI7460DP-T1-E3

VISHAY5000HK Niuhuasi Technology Limited    8
WarrantyNewAndOriginal

SI7460DP-T1-E3

VISHAY10+500CHIPMALL ELECTRONICS LIMITED    4

SI7460DP-T1-E3

VISHAY1101+36884Ande Electronics Co., Limited    13
STRCWarranty

SI7460DP-T1-E3
 

VISHAY12000Belt (HK) Electronics Co    12

SI7460DP-T1-E3

VISHAY10+3809Hong Kong In Fortune Electronics Co., Limited    13

Related Part Number

SI7460DP-T1-GE3 | SI7461DPT1E3 | SI7454DP-T1-E3 | SI7456CDP-T1-GE3 | SI7456DDP-T1-GE3 | SI7456DP-T1-E3 | SI7456DP-T1-GE3 | SI7459DP-T1-E3 | SI7459DP-T1-GE3 | SI7460DP-T1-GE3 | SI7461DPT1E3
SI7460DP-T1-E3 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIPOIZO]
[HGReferer_OnlineAd]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SI7460DP-T1-E3 Related Keywords in 2019 USA

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