Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET P-CH 20V 35A 1212-8 PPAK
Tape & Reel (TR)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25Â°C:
Drive Voltage (Max Rds On, Min Rds On):
Vgs(th) (Max) @ Id:
2.2V @ 250ÂµA
Gate Charge (Qg) (Max) @ Vgs:
87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2620pF @ 10V
Power Dissipation (Max):
3.8W (Ta), 52.1W (Tc)
Rds On (Max) @ Id, Vgs:
8.7 mOhm @ 17A, 10V
-50Â°C ~ 150Â°C (TJ)
Supplier Device Package:
Package / Case:
Search For SI7613DNT1GE3 - SI7613DNT1GE3 Product Information :
SI7613DNT1GE3 Apr 20, 2009 3.2a, b. Maximum Power Dissipation. TC = 25 C. PD. 52.1. W. TC = 70 C. 33.3. TA = 25 C. 3.8a, b. TA = 70 C. 2.4a, b. Operating Junction and Storage Temperature Range. TJ, Tstg. - 50 to 150. C. Soldering Recommendations ( Peak Temperature)c, d. 260. Ordering Information: Si7613DN - T1 - GE3 (Lead ...
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