【SI7820DN-T1-GE3 Transistors - FETs, MOSFETs - Single VISHAY】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI7820DN-T1-GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 200V 1.7A 1212-8

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200V

Current - Continuous Drain (Id) @ 25°C:

1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

-

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

1.5W (Ta)

Rds On (Max) @ Id, Vgs:

240 mOhm @ 2.6A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK 1212-8

Package / Case:

PowerPAK 1212-8

SI7820DN-T1-GE3 Description

MOSFET N-CH 200V 1.7A 1212-8 Series: TrenchFET? Amplifier Type: -55°C ~ 150°C (TJ) Applications: Surface Mount Capacitance: PowerPAK? 1212-8
1 - 5 of 5 Record(s)
SI7820DNT1GE3
 Part NumberBrandD/CQtyCompany
WarrantyNewAndOriginal

SI7820DN-T1-GE3

VISHAY1041+3000CHIPMALL ELECTRONICS LIMITED    4

SI7820DN-T1-GE3

VISHAY2015+29501Ande Electronics Co., Limited    12

SI7820DN-T1-GE3

Vishay Semiconductors31812HongKong Wanghua Technology Limited   4

SI7820DN-T1-GE3

VISHAY2015+29246Bonase Electronics (HK) Co., Limited    12

SI7820DN-T1-GE3

VISHAY30300MASSTOCK ELECTRONICS LIMITED   1

Related Part Number

SI7790DP-T1-GE3 | SI7802DNT1E3 | SI7790DP-T1-GE3 | SI7802DNT1E3 | SI7806ADN-T1-E3 | SI7806ADN-T1-GE3 | SI7810DN-T1-E3 | SI7812DNT1E3 | SI7812DN-T1-GE3 | SI7818DNT1E3 | SI7820DN-T1-E3
SI7820DN-T1-GE3 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOPZZ]
[HGReferer_SiteMap]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SI7820DN-T1-GE3 Related Keywords in 2018 USA

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