【SI7848BDP-T1-E3 Transistors - FETs, MOSFETs - Single VISHAY】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI7848BDP-T1-E3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 40V 47A PPAK SO-8

Series:

TrenchFET

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

50nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2000pF @ 20V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

4.2W (Ta), 36W (Tc)

Rds On (Max) @ Id, Vgs:

9 mOhm @ 16A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK SO-8

Package / Case:

PowerPAK SO-8

SI7848BDP-T1-E3 Description

MOSFET N-CH 40V 47A PPAK SO-8 Series: TrenchFET? Amplifier Type: -55°C ~ 150°C (TJ) Applications: Surface Mount Capacitance: PowerPAK? SO-8
1 - 5 of 5 Record(s)
SI7848BDPT1E3
 Part NumberBrandD/CQtyCompany
WarrantyNewAndOriginal

SI7848BDP-T1-E3

VISHAY250CHIPMALL ELECTRONICS LIMITED    4

SI7848BDP-T1-E3

VISHAY09+1179Ande Electronics Co., Limited    12

SI7848BDP-T1-E3

SIX4788Hong Kong In Fortune Electronics Co., Limited    13

SI7848BDP-T1-E3

Vishay Semiconductors17281HongKong Wanghua Technology Limited   4

SI7848BDP-T1-E3

VISHAY2015+2475Bonase Electronics (HK) Co., Limited    12

Related Part Number

SI7848BDP-T1-GE3 | SI7848DP-T1-E3 | SI7840BDP-T1-E3 | SI7846DP-T1-E3 | SI7846DP-T1-GE3 | SI7848BDP-T1-GE3 | SI7848DP-T1-E3 | SI7850DP-T1-E3 | SI7850DP-T1-GE3 | SI7852ADP-T1-E3 | SI7852ADP-T1-GE3
SI7848BDP-T1-E3 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOPZA]
[HGReferer_ContactUs]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SI7848BDP-T1-E3 Related Keywords in 2018 USA

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