【SI8401DB-T1-E1 Transistors - FETs, MOSFETs - Single VISHAY】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI8401DB-T1-E1

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET P-CH 20V 3.6A 2X2 4-MFP

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

17nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

-

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

1.47W (Ta)

Rds On (Max) @ Id, Vgs:

65 mOhm @ 1A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

4-Microfoot

Package / Case:

4-XFBGA, CSPBGA

1 - 5 of 5 Record(s)
SI8401DBT1E1
 Part NumberBrandD/CQtyCompany

SI8401DB-T1-E1

VISHAY12+51000Ande Electronics Co., Limited    12

SI8401DB-T1-E1

SIX4788Hong Kong In Fortune Electronics Co., Limited    13

SI8401DB-T1-E1

VISHAY30300MASSTOCK ELECTRONICS LIMITED   1

SI8401DB-T1-E1

VISHAY12+100000Nantian Electronics Co., Limited    9

SI8401DB-T1-E1

Vishay Siliconix1000MY Group (Asia) Limited    13

Related Part Number

SI8401DB-T1-E3 | SI8402DB-T1-E1 | SI7898DP-T1-E3 | SI7898DP-T1-GE3 | SI8401DB-T1-E3 | SI8402DB-T1-E1 | SI8405DB-T1-E1 | SI8405DB-T1-E3 | SI8406DBT2E1 | SI8407DBT2E1 | SI8409DBT1E1
SI8401DB-T1-E1 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOTIB]
[HGReferer_MembershipFee]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SI8401DB-T1-E1 Related Keywords in 2018 USA

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