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【SI8417DBT2E1 Transistors - FETs, MOSFETs - Single VISHAY】【IMICB664ETB】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI8417DBT2E1

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET P-CH 12V 14.5A 2X2 6MFP

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

12V

Current - Continuous Drain (Id) @ 25°C:

14.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

57nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

2220pF @ 6V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

2.9W (Ta), 6.57W (Tc)

Rds On (Max) @ Id, Vgs:

21 mOhm @ 1A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

6-Micro Foot

Package / Case:

6-MICRO FOOT

Search For SI8417DBT2E1 - SI8417DBT2E1 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
Region
Company

SI8417DB-T2-E1

SI8417DB-T2-E1 VISHAY1132+6000China
Hongkong Intercell Electronics Co.,Limited  7

SI8417DB-T2-E1

SI8417DB-T2-E1 VISHAY1988China
CHIPMALL ELECTRONICS LIMITED  3

SI8417DB-T2-E1

SI8417DB-T2-E1 VISHAY1127+171000China
C&G Electronics (HK) Co., Ltd 1

Si8417DB-T2-E1

Si8417DB-T2-E1 VISHAY11+5000China
Acon Electronics Limited 11

SI8417DB-T2-E1

SI8417DB-T2-E1 VISHAY2015+150China
Bonase Electronics (HK) Co., Limited  12

IMICB683AABD

IMICB683AABD IMIC99+3850Hong Kong
Hongkong Rixin International Trading Company  2

IMICB664ET

IMICB664ET CYPRESS2015+421China
Bonase Electronics (HK) Co., Limited  12

IMICB664ETBT

IMICB664ETBT CY02+1530China
Centrita Technology (HK) Co., Limited  8

IMICB664ETBD

IMICB664ETBD IMI00+2450China
Rong Kun Trading Company Limited  2

IMICB664ETBD

IMICB664ETBD IMI00+2450China
Hinson International Electron Limited 1

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