【SI8810EDBT2E1 Transistors - FETs, MOSFETs - Single Vishay Semiconductors】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SI8810EDBT2E1

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 20V 2.1A MICROFOOT

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

1.5V, 4.5V

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

245pF @ 10V

Vgs (Max):

±8V

FET Feature:

-

Power Dissipation (Max):

500mW (Ta)

Rds On (Max) @ Id, Vgs:

72 mOhm @ 1A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

4-Microfoot

Package / Case:

4-XFBGA

SI8810EDBT2E1 Description

Si8810EDB - T2 - E1 (lead (Pb)-free and halogen-free). FEATURES. TrenchFET power MOSFET. Ultra small 0.8 mm x 0.8 mm outline. Ultra thin 0.357 mm
1 - 3 of 3 Record(s)
SI8810EDBT2E1
 Part NumberBrandD/CQtyCompany

SI8810EDB-T2-E1

Vishay Semiconductors36600HongKong Wanghua Technology Limited   4

SI8810EDB-T2-E1

Vishay Siliconix1400MY Group (Asia) Limited    13

SI8810EDB-T2-E1

Vishay13+8608Raref Electronics System Limited   3

Related Part Number

SI8812DB-T2-E1 | SI8817DB-T2-E1 | SI8483DBT2E1 | SI8499DB-T2-E1 | SI8800EDB-T2-E1 | SI8812DB-T2-E1 | SI8817DB-T2-E1 | SI8821EDB-T2-E1 | SI9407BDY-T1-E3 | SI9407BDY-T1-GE3 | SI9410BDY-T1-E3
SI8810EDBT2E1 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOTZI]
[HGReferer_STC_Overview]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SI8810EDBT2E1 Related Keywords in 2018 USA

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