【SI8810EDBT2E1 Transistors - FETs, MOSFETs - Single Vishay Semiconductors】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:



Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Vishay Siliconix






Tape & Reel (TR)

FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:


Drive Voltage (Max Rds On, Min Rds On):

1.5V, 4.5V

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

245pF @ 10V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

500mW (Ta)

Rds On (Max) @ Id, Vgs:

72 mOhm @ 1A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:


Package / Case:


SI8810EDBT2E1 Description

Si8810EDB - T2 - E1 (lead (Pb)-free and halogen-free). FEATURES. TrenchFET power MOSFET. Ultra small 0.8 mm x 0.8 mm outline. Ultra thin 0.357 mm
1 - 3 of 3 Record(s)
 Part NumberBrandD/CQtyCompany


Vishay Semiconductors36600HongKong Wanghua Technology Limited   4


Vishay Siliconix1400MY Group (Asia) Limited    13


Vishay13+8608Raref Electronics System Limited   3

Related Part Number

SI8812DB-T2-E1 | SI8817DB-T2-E1 | SI8483DBT2E1 | SI8499DB-T2-E1 | SI8800EDB-T2-E1 | SI8812DB-T2-E1 | SI8817DB-T2-E1 | SI8821EDB-T2-E1 | SI9407BDY-T1-E3 | SI9407BDY-T1-GE3 | SI9410BDY-T1-E3
SI8810EDBT2E1 Ref.:

SI8810EDBT2E1 Related Keywords in 2018 USA

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