【SIA411DJ-T1-GE3 Transistors - FETs, MOSFETs - Single VISHAY】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SIA411DJ-T1-GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET P-CH 20V 12A SC70-6

Series:

TrenchFET

Packaging:

Digi-Reel

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

38nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

1200pF @ 10V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

3.5W (Ta), 19W (Tc)

Rds On (Max) @ Id, Vgs:

30 mOhm @ 5.9A, 4.5V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK SC-70-6 Single

Package / Case:

PowerPAK SC-70-6

1 - 5 of 5 Record(s)
SIA411DJT1GE3
 Part NumberBrandD/CQtyCompany
WarrantyNewAndOriginal

SIA411DJ-T1-GE3

VISHAY13+200CHIPMALL ELECTRONICS LIMITED    4

SIA411DJ-T1-GE3

VISHAY15+13000Ande Electronics Co., Limited    13

SIA411DJ-T1-GE3

VISHAY2015+20754Bonase Electronics (HK) Co., Limited    13

SIA411DJ-T1-GE3

VISHAY30300MASSTOCK ELECTRONICS LIMITED   1

SIA411DJ-T1-GE3

Vishay Siliconix1000MY Group (Asia) Limited    13

Related Part Number

SI9424BDY-T1-E3 | SI9424DY | SI9424BDY-T1-E3 | SI9424DY | SI9433BDY-T1-E3 | SI9433BDY-T1-GE3 | SI9434BDY-T1-E3 | SI9435BDY-T1-E3 | SI9435BDY-T1-GE3 | SI9435DY | SIA411DJ-T1-E3
SIA411DJ-T1-GE3 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBIZIS]
[HGReferer_Escrow]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SIA411DJ-T1-GE3 Related Keywords in 2018 USA

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