【SIHP7N60E-GE3 Transistors - FETs, MOSFETs - Single Vishay Siliconix】Electronic Components In Stock Suppliers in 2019【Price】【Datasheet PDF】USA

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Part Number:

SIHP7N60E-GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 600V 7A TO-220AB

Series:

-

Packaging:

Bulk

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600V

Current - Continuous Drain (Id) @ 25°C:

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

40nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

680pF @ 100V

Vgs (Max):

±30V

FET Feature:

-

Power Dissipation (Max):

78W (Tc)

Rds On (Max) @ Id, Vgs:

600 mOhm @ 3.5A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

1 - 4 of 4 Record(s)
SIHP7N60EGE3
 Part NumberBrandD/CQtyCompany

SIHP7N60E-GE3

Vishay Siliconix14000MY Group (Asia) Limited   14

SIHP7N60E-GE3

VISH15481000Dan-Mar Components Inc.   11

SIHP7N60E-GE3

Vishay Semiconductors18000HongKong Wanghua Technology Limited   5

SIHP7N60E-E3

Vishay Siliconix1000MY Group (Asia) Limited   14

Related Part Number

SIHP21N60EF-GE3 | SIHP22N60E-GE3 | SIHP24N65E-E3 | SIHP24N65E-GE3 | SIHP25N50E-GE3 | SIHP28N60EF-GE3 | SIHP30N60E-GE3 | SIHP33N60E-GE3 | SIHP5N50D-E3
SIHP7N60E-GE3 Ref.:
[hkinbatch20181020]
[HGCacheDateZOIPOEIP]
[HGReferer_SD_Overview]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SIHP7N60E-GE3 Related Keywords in 2019 USA

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