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【SIR330DPT1GE3】【Transistors - FETs, MOSFETs - Single】【VISHAY】【VISHAY SEMICONDUCTORS】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Vishay Siliconix







FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):


Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1300pF @ 15V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

5W (Ta), 27.7W (Tc)

Rds On (Max) @ Id, Vgs:

5.6 mOhm @ 10A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK SO-8

Package / Case:

PowerPAK SO-8

Search For SIR330DPT1GE3 - SIR330DPT1GE3 Product Information : 

SiR330DP. New Product. Document Number: 67089. S10-2604-Rev. A, 15-Nov- 10 www.vishay.com. 1. N-Channel 30 V (D-S) 0.0075 at VGS = 4.5 V. 35g. Ordering Information: SiR330DP - T1 - GE3 (Lead (Pb)-free and Halogen-free). 1. 2. 3. HKinDataSheet_ZO1GOSIT
1- 5 of 5 Record(s) PREV  Page  NEXT
Part Number Part Number Brand D/C Desc Qty Country /


SIR330DP-T1-GE3  VISHAY 14+SOT23 7322China
Ande Electronics Co., Limited E-Catalog 12th Year Member


SIR330DP-T1-GE3  Vishay Semicond... 13701Hong Kong
HongKong Wanghua Technology Limited E-Catalog 4th Year Member


SIR330DP-T1-GE3  VISH 1543 2880USA
Dan-Mar Components Inc. E-Catalog 10th Year Member


SIR330DP-T1-GE3  3000China
Kehuite Technology Development (HK) Limited E-Catalog 4th Year Member


SIR330DP-T1-GE3  Vishay Siliconi... 2016+ 1000China
MY Group (Asia) Limited E-Catalog 13th Year Member

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SiR330DP. New Product. Document Number: 67089. S10-2604-Rev. A, 15-Nov- 10 www.vishay.com. 1. N-Channel 30 V (D-S) 0.0075 at VGS = 4.5 V. 35g. Ordering Information: SiR330DP - T1 - GE3 (Lead (Pb)-free and Halogen-free). 1. 2. 3. HKinDataSheet_ZO1GOSIT
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