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【SIR878ADPT1GE3】【Transistors - FETs, MOSFETs - Single】【VISHAY】【CHIPMALL】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

SIR878ADPT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 100V 40A PPAK SO-8

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

42nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1275pF @ 50V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

5W (Ta), 44.5W (Tc)

Rds On (Max) @ Id, Vgs:

14 mOhm @ 15A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK SO-8

Package / Case:

PowerPAK SO-8

Search For SIR878ADPT1GE3 - SIR878ADPT1GE3 Product Information : 

for leadless components. f. Maximum under steady state conditions is 70 C/W. PRODUCT SUMMARY. VDS (V). RDS(on) ( ) Max. ID (A)a. Qg (Typ.) 100. 0.014 at VGS = 10 V. 40. 13.9 nC. 0.0148 at VGS = 7.5 V. 38. 0.018 at VGS = 4.5 V. 34. Ordering Information: SiR878ADP - T1 - GE3 (Lead (Pb)-free and Halogen-free). 1. HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
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SIR878ADP-T1-GE3

SIR878ADP-T1-GE3  VISHAY 16+PAKSO-8 1200China
Ande Electronics Co., Limited E-Catalog 12th Year Member

SIR878ADP-T1-GE3

SIR878ADP-T1-GE3  ChipMall 13+ 1000China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

Buy Online

SIR878ADP-T1-GE3

SIR878ADP-T1-GE3  Vishay Siliconi... 2016+ 1400China
MY Group (Asia) Limited E-Catalog 13th Year Member

SIR878ADP-T1-GE3

SIR878ADP-T1-GE3  VISHAY 14+PPAK SO-8 40China
C&G Electronics (HK) Co., Ltd E-Catalog 1st Year Member

SIR878ADP-T1-GE3

SIR878ADP-T1-GE3  VISHAY SILICONI... QFN 3360China
Easy Way Electronics ( HK) Co,Ltd E-Catalog 2nd Year Member

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for leadless components. f. Maximum under steady state conditions is 70 C/W. PRODUCT SUMMARY. VDS (V). RDS(on) ( ) Max. ID (A)a. Qg (Typ.) 100. 0.014 at VGS = 10 V. 40. 13.9 nC. 0.0148 at VGS = 7.5 V. 38. 0.018 at VGS = 4.5 V. 34. Ordering Information: SiR878ADP - T1 - GE3 (Lead (Pb)-free and Halogen-free). 1. HKinDataSheet_ZO1GOSIT
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