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【SIRA04DPT1GE3 Transistors - FETs, MOSFETs - Single VISHAY】【IP117IGDESC】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SIRA04DPT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 30V 40A PPAK SO-8

Series:

TrenchFET

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

77nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

3595pF @ 15V

Vgs (Max):

+20V, -16V

FET Feature:

-

Power Dissipation (Max):

5W (Ta), 62.5W (Tc)

Rds On (Max) @ Id, Vgs:

2.15 mOhm @ 15A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK SO-8

Package / Case:

PowerPAK SO-8

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Part NumberPart Number BrandD/CQtyCountry /
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Company

SIRA04DP-T1-GE3

SIRA04DP-T1-GE3 3000China
Hong Kong In Fortune Electronics Co., Limited  13
Warranty

SIRA04DP-T1-GE3

SIRA04DP-T1-GE3 VISHAY130USA
Chip 1 Exchange USA, Inc.  1
STRC

SIRA04DP-T1-GE3

SIRA04DP-T1-GE3 Vishay20000China
Top Electronics Co.,  12

SIRA04DP-T1-GE3

SIRA04DP-T1-GE3 Vishay Siliconix2016+18000China
MY Group (Asia) Limited  13

SIRA04DP-T1-GE3

SIRA04DP-T1-GE3 VISHAY3000China
Izzition E-Technology Co., Limited  13

IP117IG-DESC

IP117IG-DESC ORIGINAL2017+80000China
ShenZhen ChuangHuaglobal Electronics Co.,Ltd1

IP117IG/883B

IP117IG/883B MSC2008+390China
Bonase Electronics (HK) Co., Limited  12
STRC

IP117IG/883

IP117IG/883 SML0532+26China
WALTON ELECTRONICS CO., LIMITED  2

IP117IG

IP117IG Semelab03+10China
Boost Components Limited  7

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IP117IGDESC | CLV1000E | CLVC125AQPWRG4Q1 | ATC8381Q | 6ME1200WXL | SIRA00DPT1GE3 | ATD88RF1354ZU | CLVC139AQPWRG4Q1 | SIRA06DPT1GE3 | CLVC16244AIDGGREP
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