【SIS438DN-T1-GE3 Transistors - FETs, MOSFETs - Single VISHAY】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SIS438DN-T1-GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 20V 16A PPAK 1212-8

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

880pF @ 10V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

3.5W (Ta), 27.7W (Tc)

Rds On (Max) @ Id, Vgs:

9.5 mOhm @ 10A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK 1212-8

Package / Case:

PowerPAK 1212-8

1 - 5 of 5 Record(s)
SIS438DNT1GE3
 Part NumberBrandD/CQtyCompany
WarrantyNewAndOriginal

SIS438DN-T1-GE3

VISHAY11+200CHIPMALL ELECTRONICS LIMITED    3

SIS438DN-T1-GE3

VISHAY16+6351Ande Electronics Co., Limited    12

SIS438DN-T1-GE3

VISHAY30300MASSTOCK ELECTRONICS LIMITED   1

SIS438DN-T1-GE3

Vishay Siliconix15000MY Group (Asia) Limited    13

SIS438DN-T1-GE3

VISHAY17+60000Yasun Group Electronics Co.,Limited  5

Related Part Number

SIS443DN-T1-GE3 | SIS454DN-T1-GE3 | SIS427EDN-T1-GE3 | SIS430DN-T1-GE3 | SIS434DN-T1-GE3 | SIS435DNT-T1-GE3 | SIS436DN-T1-GE3 | SIS443DN-T1-GE3 | SIS454DN-T1-GE3 | SIS456DN-T1-GE3 | SIS472DN-T1-GE3
SIS438DN-T1-GE3 Ref.:
[hkinbatch20180420]
[HGCacheDateZOIBOTZZ]
[HGReferer_MembershipFee]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

SIS438DN-T1-GE3 Related Keywords in 2018 USA

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