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【SIS890DNT1GE3 Transistors - FETs, MOSFETs - Single VISHAY】【MTAPC64013EBLL3EDB】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

SIS890DNT1GE3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Vishay Siliconix

Description:

MOSFET N-CH 100V 30A 1212-8

Series:

TrenchFET

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

29nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

802pF @ 50V

Vgs (Max):

±20V

FET Feature:

-

Power Dissipation (Max):

3.7W (Ta), 52W (Tc)

Rds On (Max) @ Id, Vgs:

23.5 mOhm @ 10A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK 1212-8

Package / Case:

PowerPAK 1212-8

Search For SIS890DNT1GE3 - SIS890DNT1GE3 Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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Company
STRC

SIS890DN-T1-GE3

SIS890DN-T1-GE3 VISHAY1419+8745China
Sinno Electronics Co., Limited  8

SIS890DN-T1-GE3

SIS890DN-T1-GE3 Vishay Semiconductors16175Hong Kong
HongKong Wanghua Technology Limited 4
STRC

SIS890DN-T1-GE3

SIS890DN-T1-GE3 VISHAY1408+50000China
Top Electronics Co.,  12
STRC

SIS890DN-T1-GE3

SIS890DN-T1-GE3 VISHAY1647+5000China
Acon Electronics Limited 12

SIS890DN-T1-GE3

SIS890DN-T1-GE3 VISHAY1409+3595China
Hong Kong In Fortune Electronics Co., Limited  13

M-TAPC64013E-BLL3E-DB

M-TAPC64013E-BLL3E-DB AGERE200210China
L C Great Exploit Limited 11

M-TAPC64013ABLL3A-DB

M-TAPC64013ABLL3A-DB LUCENT1060China
Top Electronics Co.,  12
STRC

MTAPC64013ABU

MTAPC64013ABU LUCENT100China
Kang Da Electronics Co.  13

MTAPC64013ABLL3A

MTAPC64013ABLL3A 05+1020China
TY International components Limited  8

MTAPC64013ABLL3A

MTAPC64013ABLL3A LUCENT15+9836Hong Kong
HongKong Honesty Electronic Technology Limited 8

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