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【SMP211BNI POWER】【FR9886ASPCTR】【NVMFD5853NT1G】HKinventory - Suppliers in 2017【Price】【Datasheet PDF】USA

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 Part NumberBrandD/CQtyCompany
SMP211BNIPOWER05+3205Hongkong Intercell Electronics Co.,Limited    6
300KWL Electronics Internations Trade Co., Limited    10
POWER02+650Icwindows Electronics HK Co.,Limited   10
SMP211BNIPH08+3000Hong Kong In Fortune Electronics Co., Limited    11
FITIPOWER1234+485Asia Components Co.,Limited    9
FR9886ASPCTRFITIPOWER100000Sunrich-Tech Corporation   5
FR9886FITIPOWER1239+1250Shenzhen Chuangxinda Electronic-Tech Co.,Ltd    14
FITIPOWER50Kwong Shun Electronics (HK)Co.   12
FR9886SPGFITIPOWER10+3714Hong Kong In Fortune Electronics Co., Limited    11
NVMFD5853NT1GON Semiconductor900Wuhan P&S Information Technology Co., Ltd.   3
NVMFD5853NT1GONN20151290Kwong Shun Electronics (HK)Co.   12
NVMFD5853NT1GON Semiconductor16184HongKong Wanghua Technology Limited   2
NVMFD5853NLT1GON1539+1490Yu Hong Technologies Limited   1

SMP211BNI Description

Datasheet Jul 1, 2009 filtered and smooth DC signal on the pin 1 of U1 SMP211BNI in Fig. 6); a first winding (i.e., 32T on T1 Transformer T1004 in Fig.

NVMFD5853NT1G Description

MOSFET 2N-CH 40V 12A SO8FL Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25~C: 12A Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250米A Gate Charge (Qg) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) @ Vds: 1225pF @ 25V Power - Max: 3.1W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

Related Part Number

SMP100LC140 | SMP10FY | SMP1252QC | SMP1307001 | SMP136 | SMP2000 | SMP20N20 | SMP211 | SMP211BN

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SMP211BNI Ref.: [hkinbatch20161020] [HGCacheDateZOITOIIT] [HGReferer_STC_Overview]
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