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【SP8K5FU6TB】【ROHM】【ROHM SEMICONDUCTOR】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 30V 3.5A 8SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 3.5A Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) @ Vds: 140pF @ 10V Power - Max: 2W Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOP HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
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SP8K5FU6TB

SP8K5FU6TB  ROHM 1000Hong Kong
ONSTAR ELECTRONICS CO., LIMITED E-Catalog 2nd Year Member

SP8K5FU6TB

SP8K5FU6TB  ROHM 1208+SOP8 2674
In-Stock
China
Hongkong Intercell Electronics Co.,Limited E-Catalog 6th Year Member

SP8K5FU6TB

SP8K5FU6TB  ROHM Semiconduc... 14510Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

SP8K5FU6TB

SP8K5FU6TB  ROHM 0951+ 595China
Amos Electronics Co., Limited E-Catalog 11th Year Member

SP8K5FU6TB

SP8K5FU6TB  ROHM 1208+SOP8 13490China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 12th Year Member

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MOSFET 2N-CH 30V 3.5A 8SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 3.5A Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 3.5nC @ 5V Input Capacitance (Ciss) @ Vds: 140pF @ 10V Power - Max: 2W Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SOP HKinDataSheet_ZO1GOSIT
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