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【SPD15P10PLGBTMA1 Transistors - FETs, MOSFETs - Single INFINEON】【346067002】【MFJ06HR007FT】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Infineon Technologies


MOSFET P-CH 100V 15A TO252-3




Cut Tape (CT)

FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Vgs(th) (Max) @ Id:

2V @ 1.54mA

Gate Charge (Qg) (Max) @ Vgs:

62nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1490pF @ 25V

Vgs (Max):


FET Feature:


Power Dissipation (Max):

128W (Tc)

Rds On (Max) @ Id, Vgs:

200 mOhm @ 11.3A, 10V

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:


Package / Case:

TO-252-3, DPak (2 Leads + Tab), SC-63

Search For SPD15P10PLGBTMA1 - SPD15P10PLGBTMA1 Product Information : 

SPD15P10PLGBTMA1 Sep 3, 2012 9 Drain-source on-state resistance. 10 Typ. gate threshold voltage. R DS(on)=f(T j); I D=-11.3 A; V GS=-10 V. V GS(th)=f(T j); V GS=V DS; AEC-Q100 Qualified With the Following Results: Exceeds HBM ESD Classification Level 2. Device CDM ESD Classification Level C4B. Maximum reverse ...
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Part NumberPart Number BrandD/CQtyCountry /


SPD15P10PLGBTMA1 1230China
Hong Kong In Fortune Electronics Co., Limited  13


SPD15P10PLGBTMA1 INFINEON1421+1383Hong Kong
JFJ Electronics Co.,Limited  13


Sinno Electronics Co., Limited  8


SPD15P10PLGBTMA1 Infineon Technologies2016+18000China
MY Group (Asia) Limited  13


Shenzhen Zhengrun Electronics Co.,Ltd 14


346-067-002 NANA200Hong Kong
OEMs Inventory1

Buy: SPD15P10PLGBTMA1, 346067002, MFJ06HR007FT
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