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【SSM6N7002FUTE85LF】【TOSHIBA】【TOS】Electronic Components In Stock Suppliers in 2017【Price】【цена】【Datasheet PDF】United States

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MOSFET 2N-CH 60V 0.2A US6 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 200mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6 HKinDataSheet_ZO1GOSIT
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SSM6N7002FUTE85LF

SSM6N7002FUTE85LF  Toshiba 12783Hong Kong
HongKong Wanghua Technology Limited E-Catalog 3rd Year Member

SSM6N7002FUTE85LF

SSM6N7002FUTE85LF  TOS 08MOSFET N CHNL 0... 3000USA
Dan-Mar Components Inc. E-Catalog 10th Year Member

SSM6N7002FU(TE85LF

SSM6N7002FU(TE85LF  TOSHIBA 09+ 3000China
C & G ELECTRONICS (HONG KONG) CO., LIMITED E-Catalog 1st Year Member

SSM6N7002FU(TE85LF

SSM6N7002FU(TE85LF  TOSHIBA 3000Hong Kong
WH Technology Company E-Catalog 2nd Year Member

SSM6N7002FU(NC)

SSM6N7002FU(NC)  TOSHIBA 2015+ 24000China
Bonase Electronics (HK) Co., Limited E-Catalog 11th Year Member

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MOSFET 2N-CH 60V 0.2A US6 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25~C: 200mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6 HKinDataSheet_ZO1GOSIT
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