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【STB13NM60N】【Transistors - FETs, MOSFETs - Single】【ST】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

STB13NM60N

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

STMicroelectronics

Description:

MOSFET N-CH 600V 11A D2PAK

Series:

MDmesh,II

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600V

Current - Continuous Drain (Id) @ 25°C:

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

790pF @ 50V

Vgs (Max):

±25V

FET Feature:

-

Power Dissipation (Max):

90W (Tc)

Rds On (Max) @ Id, Vgs:

360 mOhm @ 5.5A, 10V

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Search For STB13NM60N - STB13NM60N Product Information : 

Jun 19, 2015 This is information on a product in full production. June 2015. DocID024095 Rev 3. 1/24. STB13NM60N ,. STD13NM60N. N-channel 600 V, HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
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STB13NM60N

STB13NM60N  ST QFP 462China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

Buy Online

STB13NM60N

STB13NM60N  ST 17+TO-263 3929China
Ande Electronics Co., Limited E-Catalog 12th Year Member

STB13NM60N

STB13NM60N  STM 115China
3A COMPONENTS LIMITED E-Catalog 1st Year Member

STB13NM60N

STB13NM60N  ST 15/16+TO-263 3000China
Tide Electronic Co.,Limited E-Catalog 8th Year Member

STB13NM60N

STB13NM60N  497USA
Chip 1 Exchange USA, Inc. E-Catalog 1st Year Member

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Jun 19, 2015 This is information on a product in full production. June 2015. DocID024095 Rev 3. 1/24. STB13NM60N ,. STD13NM60N. N-channel 600 V, HKinDataSheet_ZO1GOSIT
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