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【STB40NF10LT4】【Transistors - FETs, MOSFETs - Single】【VBSEMI】【STMICROELECTRONICS】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

STB40NF10LT4

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

STMicroelectronics

Description:

MOSFET N-CH 100V 40A D2PAK

Series:

STripFET,II

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

64nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

2300pF @ 25V

Vgs (Max):

±15V

FET Feature:

-

Power Dissipation (Max):

150W (Tc)

Rds On (Max) @ Id, Vgs:

33 mOhm @ 20A, 10V

Operating Temperature:

-65°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Search For STB40NF10LT4 - STB40NF10LT4 Product Information : 

This Power MOSFET series realized with. STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate HKinDataSheet_ZO1GOSIT
1- 5 of 5 Record(s) PREV  Page  NEXT
Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

STB40NF10LT4

STB40NF10LT4  VBsemi 16+D2PAK 1134China
Ande Electronics Co., Limited E-Catalog 12th Year Member

STB40NF10LT4

STB40NF10LT4  STMicroelectron... 20283Hong Kong
HongKong Wanghua Technology Limited E-Catalog 4th Year Member

STB40NF10LT4

STB40NF10LT4  STM 12+TO252 20000China
Wide Key International Limited E-Catalog 14th Year Member

STB40NF10LT4

STB40NF10LT4  ST 09+D2PAK 8000China
Xinye International Technology Limited E-Catalog 8th Year Member

STB40NF10LT4

STB40NF10LT4  STM 11+D2PAK (TO-263) 28000
In-Stock
China
Sapu Electronics Corporation Limited E-Catalog 1st Year Member

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This Power MOSFET series realized with. STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate HKinDataSheet_ZO1GOSIT
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