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【STP23NM60ND】【Transistors - FETs, MOSFETs - Single】【ST MICROELECTRONICS】【STM】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

STP23NM60ND

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

STMicroelectronics

Description:

MOSFET N-CH 600V 19.5A TO-220

Series:

FDmesh,II

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600V

Current - Continuous Drain (Id) @ 25°C:

19.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

69nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2100pF @ 50V

Vgs (Max):

±25V

FET Feature:

-

Power Dissipation (Max):

150W (Tc)

Rds On (Max) @ Id, Vgs:

180 mOhm @ 10A, 10V

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

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Part Number Part Number Brand D/C Desc Qty Country /
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STP23NM60ND

STP23NM60ND  12+/13+ 5500Hong Kong
A & C Int'l Electronics Co. E-Catalog 11th Year Member

STP23NM60ND

STP23NM60ND  ST Microelectro... 1500China
CHIPMALL ELECTRONICS LIMITED E-Catalog 3rd Year Member

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STP23NM60ND

STP23NM60ND  STM 12000Hong Kong
SUNTOP SEMICONDUCTOR CO., LIMITED E-Catalog 3rd Year Member

STP23NM60ND

STP23NM60ND  TO220 1095China
Hong Kong In Fortune Electronics Co., Limited E-Catalog 13th Year Member

STP23NM60ND

STP23NM60ND  STMicroelectron... 41100Hong Kong
HongKong Wanghua Technology Limited E-Catalog 4th Year Member

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