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【STW17N62K3 Transistors - FETs, MOSFETs - Single STMicroelectronics】【GMBD1201S】【JTX1N6106AUS】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

STW17N62K3

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

STMicroelectronics

Description:

MOSFET N-CH 620V 15A TO-247

Series:

SuperMESH3

Packaging:

Tube

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

620V

Current - Continuous Drain (Id) @ 25°C:

15.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

94nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2500pF @ 50V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

190W (Tc)

Rds On (Max) @ Id, Vgs:

380 mOhm @ 7.5A, 10V

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-3

Package / Case:

TO-247-3

Search For STW17N62K3 - STW17N62K3 Product Information : 

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1 - 9 of 9 Record(s) PREV Page NEXT
Part NumberPart Number BrandD/CQtyCountry /
Region
Company

STW17N62K3

STW17N62K3 STMicroelectronics16221Hong Kong
HongKong Wanghua Technology Limited 4

STW17N62K3

STW17N62K3 STMicroelectronics2016+14000China
MY Group (Asia) Limited  13

STW17N62K3

STW17N62K3 STMicroelectronics13+2900China
Dopoint Hi-Tech Limited  13

GMBD1201S

GMBD1201S 38519China
Hong Kong In Fortune Electronics Co., Limited  13

GMBD1201S

GMBD1201S GIM9000China
Sinno Electronics Co., Limited  8

JTX1N6092CAQIS

JTX1N6092CAQIS 2002+1China
Bonase Electronics (HK) Co., Limited  12

JTX1N6451

JTX1N6451 51USA
Val Technologies, Inc 15
Warranty

JTX1N6075

JTX1N6075 104USA
Chip 1 Exchange USA, Inc.  1

JTX1N6075

JTX1N6075 SEMTECH CORP76China
Vadas International Co., Ltd. 1

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