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【TIP112G Transistors - Bipolar (BJT) - Single ON】【LT3650EMSE42PFB】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

TIP112G

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Brand:

ON Semiconductor

Description:

TRANS NPN DARL 100V 2A TO220AB

Series:

-

Packaging:

Tube

Transistor Type:

NPN - Darlington

Current - Collector (Ic) (Max):

2A

Voltage - Collector Emitter Breakdown (Max):

100V

Vce Saturation (Max) @ Ib, Ic:

2.5V @ 8mA, 2A

Current - Collector Cutoff (Max):

2mA

DC Current Gain (hFE) (Min) @ Ic, Vce:

1000 @ 1A, 4V

Power - Max:

2W

Frequency - Transition:

-

Operating Temperature:

-65°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Package / Case:

TO-220-3

Supplier Device Package:

TO-220AB

Search For TIP112G - TIP112G Product Information : 

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TIP112G

TIP112G ON10000China
Beijing Circle World(HuanQiuChangTong) Electronics Co., Ltd  1

TIP112G

TIP112G ON Semiconductor2016+18000China
MY Group (Asia) Limited  13
Warranty

TIP112G

TIP112G ON5China
Yangcheng Electronics Int'l Limited 13

TIP112G

TIP112G ON12+20Hong Kong
USA R&K Holdings Group Co. Limited. 8

TIP112G

TIP112G ON2015+1695China
JIALONG INDUSTRY (HK) LIMITED 1
Warranty

LT3650EMSE-4.2#PFB

LT3650EMSE-4.2#PFB 720China
CHIPMALL ELECTRONICS LIMITED  3

LT3650IDD-8.4

LT3650IDD-8.4 LT1055China
Top Electronics Co.,  12
STRCWarranty

LT3650EDD-8.4#PBF

LT3650EDD-8.4#PBF LINEAR2950China
Belt (HK) Electronics Co  12
Warranty

LT3650EDD-4.1#PBF/IDD

LT3650EDD-4.1#PBF/IDD LT1210China
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd  15

LT3650IDD-8.4#PBF

LT3650IDD-8.4#PBF LT14+2263China
Hong Kong In Fortune Electronics Co., Limited  13

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LT3650EMSE42PFB | TIP111G | TIP111TU | C0402C221J4RACTU | EP20K1500EBC6521XN | TIP112 | ADM6823ZYRJZRL7 | C0402C221J5GALTU | TIP115G | EP20K1500EBC6522
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