Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
TRANS NPN 100V 3A TO-220
Current - Collector (Ic) (Max):
Voltage - Collector Emitter Breakdown (Max):
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Power - Max:
Frequency - Transition:
Package / Case:
Supplier Device Package:
Search For TIP31C - TIP31C Product Information :
TIP31C TIP31C , TIP32C. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating MAXIMUM RATINGS: (TC=25 C unless otherwise noted). SYMBOL TIP31 TIP31A TIP31B TIP31C UNITS. Collector-Base Voltage. VCBO. 40. 60. 80. 100. V . TIP31, TIP31A, TIP31B, TIP31C . NPN SILICON POWER TRANSISTORS. 1. JULY 1968 - REVISED SEPTEMBER 2002. Specifications are subject to change DESCRIPTION. The UTC TIP31C is a NPN epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. . FEATURES. CP208- TIP31C . NPN - Power Transistor Die. 3.0 Amp, 100 Volt. MECHANICAL SPECIFICATIONS: The CP208- TIP31C is a silicon NPN power transistor ...
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