【TK16J60WS1VQ Transistors - FETs, MOSFETs - Single Toshiba】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:



Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single


Toshiba Semiconductor and Storage


MOSFET N CH 600V 15.8A TO-3P(N)





FET Type:



MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):


Current - Continuous Drain (Id) @ 25°C:

15.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):


Vgs(th) (Max) @ Id:

3.7V @ 790µA

Gate Charge (Qg) (Max) @ Vgs:

38nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1350pF @ 300V

Vgs (Max):


FET Feature:

Super Junction

Power Dissipation (Max):

130W (Tc)

Rds On (Max) @ Id, Vgs:

190 mOhm @ 7.9A, 10V

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:


Package / Case:

TO-3P-3, SC-65-3

1 - 5 of 5 Record(s)
 Part NumberBrandD/CQtyCompany


Toshiba13340HongKong Wanghua Technology Limited   4


TOS1346+90Rolics Technology Limited    1


TOSHIBA50000Tianke Electronics (HK) Limited    12


Toshiba Semiconductor and Storage18000MY Group (Asia) Limited    13


TOS1346+90Yu Hong Technologies Limited   2

Related Part Number

TK14A45D | TK14A55D | TK14A45D | TK14A55D | TK14A65W5S5X | TK15A50D | TK15A60D | TK15A60U | TK15J60U | TK16A55D | TK16A60W5,S4VX
TK16J60WS1VQ Ref.:

TK16J60WS1VQ Related Keywords in 2018 USA

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