Part Number: | TK35N65WS1F |
Product Name: | TK35N65WS1F Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | TK35N65WS1F |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Toshiba Semiconductor and Storage |
Description: | MOSFET N-CH 650V 35A TO-247 |
Series: | DTMOSIV |
Packaging: | Tube |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 2.1mA |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 300V |
Vgs (Max): | ±30V |
FET Feature: | - |
Power Dissipation (Max): | 270W (Tc) |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 17.5A, 10V |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Part Number
Brand
D/C
Qty
TK35N65W,S1F(S TOSHIBA/ 2022
TOSHIBA/
2022
368000
USD 0
TK35N65W,S1F TOSHIBA 2021+
TOSHIBA
2021+
20000
USD 0
TK35N65W,S1F(S 22+
22+
7550
USD 0
TK35N65W,S1F(S ORIGINAL 22+
ORIGINAL
22+
5250
USD 0
TK35N65W,S1F Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
18000
USD 0
TK35N65W,S1F(S TOSHIBA/ 2022
TOSHIBA/
2022
368000
USD 0
TK35N65W,S1F TOSHIBA 2021+
TOSHIBA
2021+
20000
USD 0
TK35N65W,S1F(S 22+
22+
7550
USD 0
TK35N65W,S1F(S ORIGINAL 22+
ORIGINAL
22+
5250
USD 0
TK35N65W,S1F Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
18000
USD 0