Part Number: | TPN2010FNHL1Q |
Product Name: | TPN2010FNHL1Q Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | TPN2010FNHL1Q |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Toshiba Semiconductor and Storage |
Description: | MOSFET N-CH 250V 5.6A 8TSON |
Series: | U-MOSVIII-H |
Packaging: | Cut Tape (CT) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Vgs(th) (Max) @ Id: | 4V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 100V |
Vgs (Max): | ±20V |
FET Feature: | - |
Power Dissipation (Max): | 700mW (Ta), 39W (Tc) |
Rds On (Max) @ Id, Vgs: | 198 mOhm @ 2.8A, 10V |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
Package / Case: | 8-PowerVDFN |
Part Number
Brand
D/C
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Part NO. : TPN2010FNHL1Q
Brand : TOSHIBA/
Date Code :
Qty : 13586
USD 0
Part NO. : TPN2010FNH,L1Q
Brand : TOSHIBA/
Date Code :
Qty : 66328
USD 0
Part NO. : TPN2010FNHL1Q
Brand :
Date Code :
Qty : 151
USD 0
Part NO. : TPN2010FNH,L1Q
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 18000
USD 0
Part NO. : TPN2010FNH,L1Q
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0
Part NO. : TPN2010FNHL1Q
Brand : TOSHIBA/
Date Code :
Qty : 13586
USD 0
Part NO. : TPN2010FNH,L1Q
Brand : TOSHIBA/
Date Code :
Qty : 66328
USD 0
Part NO. : TPN2010FNHL1Q
Brand :
Date Code :
Qty : 151
USD 0
Part NO. : TPN2010FNH,L1Q
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 18000
USD 0
Part NO. : TPN2010FNH,L1Q
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0