Part Number: | TPN22006NHLQ |
Product Name: | TPN22006NHLQ Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | TPN22006NHLQ |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Toshiba Semiconductor and Storage |
Description: | MOSFET N CH 60V 9A 8-TSON |
Series: | U-MOSVIII-H |
Packaging: | Cut Tape (CT) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6.5V, 10V |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 30V |
Vgs (Max): | ±20V |
FET Feature: | - |
Power Dissipation (Max): | 700mW (Ta), 18W (Tc) |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 4.5A, 10V |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
Package / Case: | 8-PowerVDFN |
Part Number
Brand
D/C
Qty
Part NO. : TPN22006NH,LQ(S
Brand : TOSHIBA
Date Code : 2021+
Qty : 30000
USD 0
Part NO. : TPN22006NH,LQ(S
Brand : TOSHIBA
Date Code : 14+
Qty : 310
USD 0
Part NO. : TPN22006NH,LQ
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 18000
USD 0
Part NO. : TPN22006NH,LQ(S
Brand : TOSHIBA/
Date Code : 2022
Qty : 368000
USD 0
Part NO. : TPN22006NH,LQ(S
Brand : TOSHIBA/
Date Code : 2022
Qty : 568600
USD 0
Part NO. : TPN22006NH,LQ(S
Brand : TOSHIBA
Date Code : 2021+
Qty : 30000
USD 0
Part NO. : TPN22006NH,LQ(S
Brand : TOSHIBA
Date Code : 14+
Qty : 310
USD 0
Part NO. : TPN22006NH,LQ
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 18000
USD 0
Part NO. : TPN22006NH,LQ(S
Brand : TOSHIBA/
Date Code : 2022
Qty : 368000
USD 0
Part NO. : TPN22006NH,LQ(S
Brand : TOSHIBA/
Date Code : 2022
Qty : 568600
USD 0