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ZXMN2A04DN8TA ZXMN2A04DN8TA  ZETEX 40000China
CHIPMALLS ELECTRONICS LIMITED E-Catalog 2nd Year Member

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ZXMN2A04DN8TA ZXMN2A04DN8TA  ZETEX/DIODES 1124+SOP-8 4738Hong Kong
Asia Components Co.,Limited E-Catalog 9th Year Member

ZXMN2A04DN8TA ZXMN2A04DN8TA  30000ZETEX SOP-8 5279China
Acon Electronics Limited E-Catalog 10th Year Member

ZXMN2A04DN8TA ZXMN2A04DN8TA  ZETEX 1549 29530China
BEETLES ELECTRONICS LIMITED E-Catalog 1st Year Member

ZXMN2A04DN8TA ZXMN2A04DN8TA  ZETEX/DIODES 1124+SOP-8 3000China
ShenZhen HengBin Technology Co.,Limited E-Catalog 5th Year Member

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1812J0500474J | 416237501 | 715G5323M01002004X | A98L00310012 | AD8039ARTZREEL7 | CT028TN05 | GRM188R71H223KTR | LM27292SQ/NOPB | MB60251V1000UG99 | MIC3231YTSE | RE17RLMU | S29GL064N90BFI040A | TB2928HQ | TPS799195DRV [hkinbatch019] [hkingendate20161023] [hkingenidC168609][hkinOfferInventC]
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MOSFET 2N-CH 20V 5.9A 8-SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 5.9A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250米A (Min) Gate Charge (Qg) @ Vgs: 22.1nC @ 5V Input Capacitance (Ciss) @ Vds: 1880pF @ 10V Power - Max: 1.8W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT

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