| Part Number: | 2SB1457T6YMEF |
| Product Name: | 2SB1457T6YMEF Transistors - Bipolar (BJT) - Single |
| Merchant-Specific Identifier: | 2SB1457T6YMEF |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS PNP 2A 100V TO226-3 |
| Series: | - |
| Packaging: | Bulk |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 1A, 2V |
| Power - Max: | 900mW |
| Frequency - Transition: | 50MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package: | TO-92MOD |
Part Number
Brand
D/C
Qty
Part NO. : 2SB1457,T6YMEF(M
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : 2SB1457,T6YMEF(M
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0
Part NO. : 2SB1457,T6YMEF(M
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 81630
USD 0
Part NO. : 2SB1457,T6YMEF(M
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : 2SB1457,T6YMEF(M
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : 2SB1457,T6YMEF(M
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : 2SB1457,T6YMEF(M
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0
Part NO. : 2SB1457,T6YMEF(M
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 81630
USD 0
Part NO. : 2SB1457,T6YMEF(M
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
Part NO. : 2SB1457,T6YMEF(M
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 8000
USD 0
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