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【AUIRF7313Q】【Transistors - FETs, MOSFETs - Arrays】【IR】【INFINEON TECHNOLOGIES】Electronic Components In Stock Suppliers in 2018【Price】【цена】【Datasheet PDF】United States

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Part Number:

AUIRF7313Q

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Brand:

Infineon Technologies

Description:

MOSFET 2N-CH 30V 6.5A 8SOIC

Series:

HEXFET

Packaging:

Tube

FET Type:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

6.9A

Rds On (Max) @ Id, Vgs:

29 mOhm @ 6.9A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

33nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

755pF @ 25V

Power - Max:

2.4W

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SOIC

Supplier Device Package:

8-SO

Search For AUIRF7313Q - AUIRF7313Q Product Information : 

MOSFET 2N-CH 30V 6.5A 8SOIC Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.9A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) @ Vds: 755pF @ 25V Power - Max: 2.4W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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Part Number Part Number Brand D/C Desc Qty Country /
Region
Company

AUIRF7313Q

AUIRF7313Q  IR 2015+ 6557China
Bonase Electronics (HK) Co., Limited E-Catalog 12th Year Member

AUIRF7313Q

AUIRF7313Q  Infineon Techno... 2016+ 8000China
MY Group (Asia) Limited E-Catalog 13th Year Member

AUIRF7313Q

AUIRF7313Q  ir 16+ORIGINAL PACKAG... 62000China
APEX ELECTRONICS CO., LIMITED E-Catalog 3rd Year Member

AUIRF7739L2TR1

AUIRF7739L2TR1  1334+DIRECTFET 525
In-Stock
Hong Kong
JFJ Electronics Co.,Limited E-Catalog 13th Year Member

AUIRF7103QTRPBF

AUIRF7103QTRPBF  IR 13+SOP8 6558China
HK TWO L ELECTRONIC LIMITED E-Catalog 6th Year Member

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MOSFET 2N-CH 30V 6.5A 8SOIC Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.9A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) @ Vds: 755pF @ 25V Power - Max: 2.4W Operating Temperature: -55~C ~ 175~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO HKinDataSheet_ZO1GOSIT
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