Part Number: | BSB008NE2LXXUMA1 |
Product Name: | BSB008NE2LXXUMA1 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | BSB008NE2LXXUMA1 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Infineon Technologies |
Description: | MOSFET N-CH 25V 46A 2WDSON |
Series: | OptiMOS |
Packaging: | Tape & Reel (TR) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Ta), 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 343nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 16000pF @ 12V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
Rds On (Max) @ Id, Vgs: | 0.8 mOhm @ 30A, 10V |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | MG-WDSON-2, CanPAK M |
Package / Case: | 3-WDSON |
Part Number
Brand
D/C
Qty
Part NO. : BSB008NE2LXXUMA1
Brand : Infineon
Date Code :
Qty : 30000
USD 0
Part NO. : BSB008NE2LXXUMA1
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : BSB008NE2LXXUMA1
Brand : Infineon Technologies
Date Code : 21+
Qty : 16000
USD 0
Part NO. : BSB008NE2LXXUMA1
Brand : Infineon Technologies
Date Code :
Qty : 1000
USD 0
Part NO. : BSB008NE2LXXUMA1
Brand : INFINEON TECHNOLOGIES AG
Date Code : 22+
Qty : 3000
USD 0
Part NO. : BSB008NE2LXXUMA1
Brand : Infineon
Date Code :
Qty : 30000
USD 0
Part NO. : BSB008NE2LXXUMA1
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : BSB008NE2LXXUMA1
Brand : Infineon Technologies
Date Code : 21+
Qty : 16000
USD 0
Part NO. : BSB008NE2LXXUMA1
Brand : Infineon Technologies
Date Code :
Qty : 1000
USD 0
Part NO. : BSB008NE2LXXUMA1
Brand : INFINEON TECHNOLOGIES AG
Date Code : 22+
Qty : 3000
USD 0