| Part Number: | BSB012N03LX3 |
| Product Name: | BSB012N03LX3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | BSB012N03LX3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 30V 180A 2WDSON |
| Series: | OptiMOS |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 39A (Ta), 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 169nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 16900pF @ 15V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
| Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 30A, 10V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | MG-WDSON-2, CanPAK M |
| Package / Case: | 3-WDSON |
Part Number
Brand
D/C
Qty
Part NO. : BSB012N03LX3 G
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : BSB012N03LX3 G
Brand : INFINEON/
Date Code : 22+
Qty : 20000
USD 0
Part NO. : BSB012N03LX3 G
Brand : Infineon Technologies
Date Code : 21+
Qty : 16000
USD 0
Part NO. :
BSB012N03LX3
Brand : MG-WDSON
Date Code :
Qty : 20
USD 0
Part NO. : BSB012N03LX3 G
Brand : INFINEON
Date Code : 20+
Qty : 8000
USD 0
Part NO. : BSB012N03LX3 G
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : BSB012N03LX3 G
Brand : INFINEON/
Date Code : 22+
Qty : 20000
USD 0
Part NO. : BSB012N03LX3 G
Brand : Infineon Technologies
Date Code : 21+
Qty : 16000
USD 0
Part NO. :
BSB012N03LX3
Brand : MG-WDSON
Date Code :
Qty : 20
USD 0
Part NO. : BSB012N03LX3 G
Brand : INFINEON
Date Code : 20+
Qty : 8000
USD 0
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