Part Number: | BSC018NE2LSATMA1 |
Product Name: | BSC018NE2LSATMA1 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | BSC018NE2LSATMA1 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Infineon Technologies |
Description: | MOSFET N-CH 25V 100A TDSON-8 |
Series: | OptiMOS |
Packaging: | |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 12V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 69W (Tc) |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 30A, 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 |
Package / Case: | 8-PowerTDFN |
Part Number
Brand
D/C
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Part NO. : BSC018NE2LSATMA1
Brand : INFINEON TECHNOLOGIES AG
Date Code : 22+
Qty : 3000
USD 0
Part NO. : BSC018NE2LSATMA1
Brand : Infineon Technologies
Date Code : 21+
Qty : 16000
USD 0
Part NO. : BSC018NE2LSATMA1
Brand : Infineon
Date Code : 22+
Qty : 5000
USD 0
Part NO. : BSC018NE2LSATMA1
Brand : INFINEON
Date Code :
Qty : 2840
USD 0
Part NO. : BSC018NE2LSATMA1
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : BSC018NE2LSATMA1
Brand : INFINEON TECHNOLOGIES AG
Date Code : 22+
Qty : 3000
USD 0
Part NO. : BSC018NE2LSATMA1
Brand : Infineon Technologies
Date Code : 21+
Qty : 16000
USD 0
Part NO. : BSC018NE2LSATMA1
Brand : Infineon
Date Code : 22+
Qty : 5000
USD 0
Part NO. : BSC018NE2LSATMA1
Brand : INFINEON
Date Code :
Qty : 2840
USD 0
Part NO. : BSC018NE2LSATMA1
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0