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【BSC094N03S Transistors - FETs, MOSFETs - Single INFINEO】【CY7C13155NI】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

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Part Number:

BSC094N03S

Catagory:

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Brand:

Infineon Technologies

Description:

MOSFET N-CH 30V 35A TDSON-8

Series:

OptiMOS

Packaging:

Tape & Reel (TR)

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

14.6A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Vgs(th) (Max) @ Id:

2V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:

14nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

1800pF @ 15V

Vgs (Max):

-

FET Feature:

-

Power Dissipation (Max):

2.8W (Ta), 52W (Tc)

Rds On (Max) @ Id, Vgs:

9.4 mOhm @ 35A, 10V

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TDSON-8

Package / Case:

8-PowerTDFN

Search For BSC094N03S - BSC094N03S Product Information : 

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Part NumberPart Number BrandD/CQtyCountry /
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Company

BSC094N03S

BSC094N03S INFINEO05+800China
Ande Electronics Co., Limited  12

BSC094N03S G

BSC094N03S G Infineon Technologies1000China
MY Group (Asia) Limited  13
Warranty

BSC094N03S

BSC094N03S INFINEON10+89Hong Kong
E-Core Electronics Co. 9

BSC094N03S

BSC094N03S INFINEON5000China
International Smart Trading Limited 4

BSC094N03S G

BSC094N03S G infineon2013+5000China
G Trader Limited 8

CY7C131-55NI

CY7C131-55NI CYPRESS2000China
HK Niuhuasi Technology Limited  8

CY7C131-55NI

CY7C131-55NI CYPRESS190China
HK Jiaweiyi Technology Limited  13

CY7C131-55NI

CY7C131-55NI CYPRESS89China
Fossion International  10

CY7C131-55NI

CY7C131-55NI CYPRESS15+8654China
ENSPIRE TECHNOLOGY (HONG KONG) CO., LIMITED  5

CY7C131-55NI

CY7C131-55NI CY18+30000China
APEX ELECTRONICS CO., LIMITED 4

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CY7C13155NI | RH1H | LMV3395DR | BSC094N03SG | RH1KM100E110T | RH1P | BSC100N03LS | BSC100N03MS | RH1ZV1 | BSC100N10NSF
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