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Home > Part Number Index > Index 5 > Product (Page: 131) > CSD85312Q3E

What is CSD85312Q3E?

Part Number: CSD85312Q3E
Product Name: CSD85312Q3E Transistors - FETs, MOSFETs - Arrays
Merchant-Specific Identifier: CSD85312Q3E
Category: Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Brand: <a href='https://texas_instruments.hkinventory.com/' target='_blank'>Texas Instruments</a>
Description: MOSFET 2N-CH 20V 39A 8VSON
Series: NexFET
Packaging: 2 N-Channel (Dual) Common Source
FET Type: Cut Tape (CT)
FET Feature: Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 10A, 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-VSON (3.3x3.3)
Rated 4/5 based on 20 customer reviews
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

CSD85312Q3E

This is a cached page collected on 2/6/2024 5:17:02 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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Part NO. : CSD85312Q3E

Brand : Texas Instruments  

Date Code : 19

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CSD85312Q3E

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Part NO. : CSD85312Q3E  

Brand : Texas Instruments 

Date Code : 19

Qty : 5000
USD 0

Part NO. : CSD85312Q3E

Brand : TI 

Date Code : 22+

Qty : 3056
USD 0

Part NO. : CSD85312Q3E

Brand : TI/ 

Date Code : 19+

Qty : 5000
USD 0

Part NO. : CSD85312Q3E

Brand : TI 

Date Code : 19+

Qty : 2398
USD 0

Part NO. : CSD85312Q3E  

Brand : Texas Instruments 

Date Code : 19

Qty : 5000
USD 0

This is a cached page collected on 2/6/2024 5:17:02 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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