【EMH4T2R Transistors - Bipolar (BJT) - Arrays, Pre-Biased ROHM】
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Part Number:

EMH4T2R

Catagory:

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Brand:

Rohm Semiconductor

Description:

TRANS 2NPN PREBIAS 0.15W EMT6

Series:

-

Packaging:

Tape & Reel (TR)

Transistor Type:

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1) (Ohms):

10k

Resistor - Emitter Base (R2) (Ohms):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic:

300mV @ 1mA, 10mA

Current - Collector Cutoff (Max):

500nA (ICBO)

Frequency - Transition:

250MHz

Power - Max:

150mW

Mounting Type:

Surface Mount

Package / Case:

SOT-563, SOT-666

Supplier Device Package:

EMT6

Target Price is in USD
$1.78 to $6.24
1 - 5 of 5 Record(s)
Hot Offer
 Part NumberBrandD/CQtyPriceCompany

EMH4 T2R

ROHM11+PB165001.78Hongkong Intercell Electronics Co.,Limited   8

EMH4T2R
 Part NumberBrandD/CQtyPriceCompany
Warranty

EMH4 T2R

ROHM952722.37CIS Ltd (CHECK IC SOLUTION LIMITED)    1

EMH4 T2R

110004Hong Kong In Fortune Electronics Co., Limited    14

EMH4T2R

Rohm Semiconductor80005.28MY Group (Asia) Limited   14

EMH4 T2R

ROHM160006.243A COMPONENTS LIMITED   2

Related Part Number

EMG6T2R | EMG8T2R | EMG9T2R | EMH10 T2R | EMH11 T2R | EMH15T2R | EMH1T2R | EMH2T2R | EMH3T2R
EMH4T2R Ref.:
[hkinbatch20181020]
[HGCacheDateZOIPOEZS]
[HGReferer_STC_Overview]
[HKIN20180420GESTYLE]
[HKIN20171020MDPartDetails]

EMH4T2R Related Keywords in 2019 USA

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