Part Number: | HN1B04FEYLF |
Product Name: | HN1B04FEYLF Transistors - Bipolar (BJT) - Arrays |
Merchant-Specific Identifier: | HN1B04FEYLF |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS NPN/PNP 50V 0.15A ES6 |
Series: | - |
Packaging: | Tape & Reel (TR) |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 6V |
Power - Max: | 100mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
Part Number
Brand
D/C
Qty
Part NO. : HN1B04FE-Y,LF
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 15000
USD 0
Part NO. : HN1B04FE-Y,LF
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0
Part NO. : HN1B04FE-Y,LF
Brand :
Date Code :
Qty : 854
USD 0
Part NO. : HN1B04FE-Y,LF
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 81630
USD 0
Part NO. : HN1B04FE-Y,LF
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 3923
USD 0
Part NO. : HN1B04FE-Y,LF
Brand : Toshiba Semiconductor and Storage
Date Code :
Qty : 15000
USD 0
Part NO. : HN1B04FE-Y,LF
Brand : Toshiba Semiconductor and Storage
Date Code : 23+
Qty : 16660
USD 0
Part NO. : HN1B04FE-Y,LF
Brand :
Date Code :
Qty : 854
USD 0
Part NO. : HN1B04FE-Y,LF
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 81630
USD 0
Part NO. : HN1B04FE-Y,LF
Brand : Toshiba Semiconductor and Storage
Date Code : 21+
Qty : 3923
USD 0