Part Number: | IPB029N06N3 |
Product Name: | IPB029N06N3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | IPB029N06N3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Infineon Technologies |
Description: | MOSFET N-CH 60V 120A TO263-3 |
Series: | OptiMOS |
Packaging: | Tape & Reel (TR) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Vgs(th) (Max) @ Id: | 4V @ 118µA |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 13000pF @ 30V |
Vgs (Max): | ±20V |
FET Feature: | - |
Power Dissipation (Max): | 188W (Tc) |
Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 100A, 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO263-2 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
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Part NO. : IPB029N06N3 G
Brand : INFINEON
Date Code :
Qty : 3305
USD 0
Part NO. : IPB029N06N3 G
Brand : TI
Date Code :
Qty : 30000
USD 0
Part NO. : IPB029N06N3 G
Brand : INFINEON
Date Code : 22+
Qty : 79999
USD 0
Part NO. : IPB029N06N3 G
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : IPB029N06N3 G
Brand : INFINEON
Date Code : 22+/23+
Qty : 10000
USD 0
Part NO. : IPB029N06N3 G
Brand : INFINEON
Date Code :
Qty : 3305
USD 0
Part NO. : IPB029N06N3 G
Brand : TI
Date Code :
Qty : 30000
USD 0
Part NO. : IPB029N06N3 G
Brand : INFINEON
Date Code : 22+
Qty : 79999
USD 0
Part NO. : IPB029N06N3 G
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : IPB029N06N3 G
Brand : INFINEON
Date Code : 22+/23+
Qty : 10000
USD 0