Part Number: | IPB036N12N3 |
Product Name: | IPB036N12N3 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | IPB036N12N3 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Infineon Technologies |
Description: | MOSFET N-CH 120V 180A TO263-7 |
Series: | OptiMOS |
Packaging: | Cut Tape (CT) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 120V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Vgs(th) (Max) @ Id: | 4V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs: | 211nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 13800pF @ 60V |
Vgs (Max): | ±20V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 100A, 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO263-7 |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Part Number
Brand
D/C
Qty
Part NO. : IPB036N12N3
Brand : INFINEON
Date Code : 22+
Qty : 10000
USD 0
Part NO. : IPB036N12N3
Brand : Infineon
Date Code : 21+
Qty : 30000
USD 0
Part NO. : IPB036N12N3 GS
Brand : INFINEON/
Date Code :
Qty : 40000
USD 0
Part NO. : IPB036N12N3 G
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : IPB036N12N3
Brand : Infineon
Date Code :
Qty : 1000
USD 0
Part NO. : IPB036N12N3
Brand : INFINEON
Date Code : 22+
Qty : 10000
USD 0
Part NO. : IPB036N12N3
Brand : Infineon
Date Code : 21+
Qty : 30000
USD 0
Part NO. : IPB036N12N3 GS
Brand : INFINEON/
Date Code :
Qty : 40000
USD 0
Part NO. : IPB036N12N3 G
Brand : INFINEON
Date Code : 22+
Qty : 32000
USD 0
Part NO. : IPB036N12N3
Brand : Infineon
Date Code :
Qty : 1000
USD 0