| Part Number: | IPD082N10N3GATMA1 |
| Product Name: | IPD082N10N3GATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPD082N10N3GATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 100V 80A TO252-3 |
| Series: | OptiMOS |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 75µA |
| Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3980pF @ 50V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 125W (Tc) |
| Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 73A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : IPD082N10N3GATMA1
Brand : INFINEON
Date Code : 21+
Qty : 3044
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. : IPD082N10N3GATMA1
Brand : INFINEON
Date Code : 22+
Qty : 55300
USD 0
Part NO. : IPD082N10N3GATMA1
Brand : Infineon
Date Code :
Qty : 30000
USD 0
Part NO. : IPD082N10N3GATMA1
Brand : Infineon
Date Code : 22+
Qty : 7500
USD 0
Part NO. : IPD082N10N3GATMA1
Brand : INFINEON
Date Code : 22+
Qty : 55300
USD 0
Part NO. : IPD082N10N3GATMA1
Brand : Infineon
Date Code :
Qty : 30000
USD 0
Part NO. : IPD082N10N3GATMA1
Brand : Infineon
Date Code : 22+
Qty : 7500
USD 0
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