| Part Number: | IPD60R3K3C6ATMA1 |
| Product Name: | IPD60R3K3C6ATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPD60R3K3C6ATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 600V 1.7A TO252-3 |
| Series: | CoolMOS,C6 |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600V |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 40µA |
| Gate Charge (Qg) (Max) @ Vgs: | 4.6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 93pF @ 100V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 18.1W (Tc) |
| Rds On (Max) @ Id, Vgs: | 3.3 Ohm @ 500mA, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
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Part NO. : IPD60R3K3C6ATMA1
Brand : Infineon Technologies
Date Code :
Qty : 18000
USD 0
Part NO. : IPD60R3K3C6ATMA1
Brand : Infineon
Date Code : 21+
Qty : 30000
USD 0
Part NO. : IPD60R3K3C6ATMA1
Brand : ST
Date Code :
Qty : 30000
USD 0
Part NO. : IPD60R3K3C6ATMA1
Brand : Infineon
Date Code : 21+
Qty : 3000
USD 0
Part NO. : IPD60R3K3C6ATMA1
Brand : Infineon
Date Code : 22+
Qty : 2500
USD 0
Part NO. : IPD60R3K3C6ATMA1
Brand : Infineon Technologies
Date Code :
Qty : 18000
USD 0
Part NO. : IPD60R3K3C6ATMA1
Brand : Infineon
Date Code : 21+
Qty : 30000
USD 0
Part NO. : IPD60R3K3C6ATMA1
Brand : ST
Date Code :
Qty : 30000
USD 0
Part NO. : IPD60R3K3C6ATMA1
Brand : Infineon
Date Code : 21+
Qty : 3000
USD 0
Part NO. : IPD60R3K3C6ATMA1
Brand : Infineon
Date Code : 22+
Qty : 2500
USD 0
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