| Part Number: | IPG20N10S4L35ATMA1 |
| Product Name: | IPG20N10S4L35ATMA1 Transistors - FETs, MOSFETs - Arrays |
| Merchant-Specific Identifier: | IPG20N10S4L35ATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
| Brand: | Infineon Technologies |
| Description: | MOSFET 2N-CH 8TDSON |
| Series: | Automotive, AEC-Q101, OptiMOS |
| Packaging: | 2 N-Channel (Dual) |
| FET Type: | Tape & Reel (TR) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 20A |
| Rds On (Max) @ Id, Vgs: | 35 mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id: | 2.1V @ 16µA |
| Gate Charge (Qg) (Max) @ Vgs: | 17.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1105pF @ 25V |
| Power - Max: | 43W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | PG-TDSON-8-4 |
Part Number
Brand
D/C
Qty
Price (USD)
Part NO. : IPG20N10S4L35ATMA1
Brand : Infineon
Date Code : 22+
Qty : 2000
Unit Price :
(USD)
USD
0
Part Number
Brand
D/C
Qty
Part NO. :
IPG20N10S4L35ATMA1
Brand : Infineon
Date Code : 22+
Qty : 2000
USD 0
Part NO. : IPG20N10S4L35ATMA1
Brand : Infineon
Date Code : 22+
Qty : 2500
USD 0
Part NO. : IPG20N10S4L35ATMA1
Brand : Infineon Technologies
Date Code : 21+
Qty : 5000
USD 0
Part NO. :
IPG20N10S4L35ATMA1
Brand : Infineon
Date Code : 22+
Qty : 2000
USD 0
Part NO. : IPG20N10S4L35ATMA1
Brand : Infineon
Date Code : 22+
Qty : 2500
USD 0
Part NO. : IPG20N10S4L35ATMA1
Brand : Infineon Technologies
Date Code : 21+
Qty : 5000
USD 0
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